- Número de pieza
- G3R40MT12D
- Fabricante
- GeneSiC Semiconductor
- Categorías
- MOSFET
- RoHS
- Ficha de datos
- Descripción
- MOSFET 1200V 40mO TO-247-3 G3R SiC MOSFET
G3R40MT12D
Las imágenes son sólo para referencia
Presupuesto
- Fabricante
- GeneSiC Semiconductor
- Categorías
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 63 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-3
- Packaging
- Tube
- Pd - Power Dissipation
- 297 W
- Qg - Gate Charge
- 88 nC
- Rds On - Drain-Source Resistance
- 40 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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últimas revisiones
Thanks for your feedback!
Anna Grden
goods very well received very good quality
Fabrice Cubaynes
Received, Fast shipping, not checked yet
Roy Boustany
all exactly and work. радиолюбителя useful set to, thank you)
Mahmoud Shendy
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
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G3R40MT12D Noticias
03/14/2023
03/13/2023
03/09/2023
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