Número de pieza G2R50MT33K Fabricante GeneSiC Semiconductor Categorías MOSFET RoHS Ficha de datos G2R50MT33K Descripción MOSFET 3300V 50mOhmTO-247-4 SiC MOSFET
Fabricante GeneSiC Semiconductor Categorías MOSFET Channel Mode Enhancement Id - Continuous Drain Current 1 uA Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-247-4 Packaging Tube Pd - Power Dissipation 536 W Qg - Gate Charge 340 nC Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 3.3 kV Vgs - Gate-Source Voltage - 5 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V