Número de pieza 2SA1162-O,LF Fabricante Toshiba Categorías Bipolar Transistors - BJT RoHS Ficha de datos 2SA1162-O,LF Descripción Bipolar Transistors - BJT Bias Resistor Built-in transistor
Fabricante Toshiba Categorías Bipolar Transistors - BJT Collector- Base Voltage VCBO - 50 V Collector- Emitter Voltage VCEO Max - 50 V Collector-Emitter Saturation Voltage - 0.3 V Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 80 MHz Maximum DC Collector Current - 150 mA Mounting Style SMD/SMT Package / Case TO-236MOD-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 150 mW Qualification AEC-Q101 Series 2SA1162 Transistor Polarity PNP