Número de pieza 2SA1587-GR,LF Fabricante Toshiba Categorías Bipolar Transistors - BJT RoHS Ficha de datos 2SA1587-GR,LF Descripción Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Fabricante Toshiba Categorías Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 120 V Collector-Emitter Saturation Voltage - 300 mV Configuration Single Emitter- Base Voltage VEBO - 5 V Gain Bandwidth Product fT 100 MHz Maximum DC Collector Current - 100 mA Maximum Operating Temperature + 125 C Mounting Style SMD/SMT Package / Case SC-70-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 100 mW Qualification AEC-Q101 Series 2SA1587 Transistor Polarity PNP