Número de pieza 2SA1417T-TD-E Fabricante onsemi Categorías Bipolar Transistors - BJT RoHS Ficha de datos 2SA1417T-TD-E Descripción Bipolar Transistors - BJT BIP PNP 2A 100V
Fabricante onsemi Categorías Bipolar Transistors - BJT Collector- Base Voltage VCBO - 120 V Collector- Emitter Voltage VCEO Max - 100 V Collector-Emitter Saturation Voltage - 0.22 V Configuration Single Emitter- Base Voltage VEBO - 6 V Gain Bandwidth Product fT 120 MHz Maximum DC Collector Current - 3 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Package / Case PCP-3 Packaging Cut Tape, MouseReel, Reel Pd - Power Dissipation 500 mW Series 2SA1417 Transistor Polarity PNP