2SA1943N(S1,E,S)

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Número de pieza: 2SA1943N(S1,E,S)

Fabricante: Toshiba

Categorías: Bipolar Transistors - BJT

RoHS

Ficha de datos: 2SA1943N(S1,E,S)

Descripción: Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ

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Presupuesto

Fabricante: Toshiba

Categorías: Bipolar Transistors - BJT

Collector- Base Voltage VCBO: - 230 V

Collector- Emitter Voltage VCEO Max: - 230 V

Collector-Emitter Saturation Voltage: - 1.5 V

Configuration: Single

Emitter- Base Voltage VEBO: - 5 V

Gain Bandwidth Product fT: 30 MHz

Maximum DC Collector Current: - 15 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Package / Case: TO-3P-3

Packaging: Tube

Pd - Power Dissipation: 150 W

Series: 2SA

Transistor Polarity: PNP

Categoría de productos

Circuit Protection 162,445 Productos Connectors 2,428,639 Productos Electromechanical 556,105 Productos Embedded Solutions 41,129 Productos Enclosures 20,894 Productos Engineering Development Tools 42,996 Productos Industrial Automation 558,346 Productos LED Lighting 77,795 Productos Optoelectronics 109,177 Productos Passive Components 2,996,719 Productos Power 323,117 Productos Semiconductors 567,247 Productos Sensors 70,154 Productos Test & Measurement 23,394 Productos

últimas revisiones

Escribe tu propio Reivew

Very good!

Manuel MAde

everything as it is written in the description of the same deductible prodovtsu deserved

Aleksov

Yes, they are all here. :)

sudheer kumar sirra

Decent quality, not минвелл certainly, but enough decent

TEIXEIRA

The goods are OK, thank you dealers.

CHARLES SANTOS

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