Número de pieza FQA6N90C-F109 Fabricante onsemi / Fairchild Categorías MOSFET RoHS Ficha de datos FQA6N90C-F109 Descripción MOSFET 900V N-Ch Q-FET advance C-Series
Fabricante onsemi / Fairchild Categorías MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 198 W Qg - Gate Charge 40 nC Rds On - Drain-Source Resistance 2.3 Ohms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 900 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V