- Número de pieza
- G3R30MT12K
- Fabricante
- GeneSiC Semiconductor
- Categorías
- MOSFET
- RoHS
- Ficha de datos
- Descripción
- MOSFET 1200V 30mO TO-247-4 G3R SiC MOSFET
G3R30MT12K
Las imágenes son sólo para referencia
Presupuesto
- Fabricante
- GeneSiC Semiconductor
- Categorías
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 70 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-4
- Packaging
- Tube
- Pd - Power Dissipation
- 281 W
- Qg - Gate Charge
- 118 nC
- Rds On - Drain-Source Resistance
- 30 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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últimas revisiones
Hello! Order received, very happy. Thank you very much!
Flavia
Perfectly.
Sensofar Tech, SL
Everything is excellent! recommend this seller!
Stoyan Chaykov
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
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G3R30MT12K Noticias
03/14/2023
03/13/2023
03/09/2023
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