- Número de pieza
- FQA19N60
- Fabricante
- onsemi / Fairchild
- Categorías
- MOSFET
- RoHS
- Ficha de datos
- Descripción
- MOSFET 600V N-CH QFET
FQA19N60
Las imágenes son sólo para referencia
Presupuesto
- Fabricante
- onsemi / Fairchild
- Categorías
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 18.5 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-3PN-3
- Packaging
- Tube
- Pd - Power Dissipation
- 300 W
- Qg - Gate Charge
- 70 nC
- Rds On - Drain-Source Resistance
- 380 mOhms
- Technology
- SI
- Tradename
- QFET
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Vgs - Gate-Source Voltage
- - 30 V, + 30 V
- Vgs th - Gate-Source Threshold Voltage
- 5 V
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últimas revisiones
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Thank You all fine, packed very well
Ulrich Bundke
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
fast delivery
Mike Ibarra
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
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FQA19N60 Noticias
03/14/2023
03/13/2023
03/09/2023
Palabras clave relacionadas para FQA1
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