Número de pieza FQA13N80-F109 Fabricante onsemi / Fairchild Categorías MOSFET RoHS Ficha de datos FQA13N80-F109 Descripción MOSFET TO-3P N-CH 600V
Fabricante onsemi / Fairchild Categorías MOSFET Channel Mode Enhancement Id - Continuous Drain Current 12.6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-3PN-3 Packaging Tube Pd - Power Dissipation 300 W Qg - Gate Charge 88 nC Rds On - Drain-Source Resistance 750 mOhms Technology SI Tradename QFET Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 3 V